NXP Semiconductor BLF145 overview
NXP Semiconductors BLF145 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:4, DS Brea...
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Part number or familyBLF145
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Manufactured byNXP Semiconductor
DescriptionNXP Semiconductors BLF145 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:4, DS Breakdown Voltage-Min:65 V, Number of Elements:1, Drain Current-Max (Abs) (ID):6 A, Drain Current-Max (ID):6 A, Drain-source On Resistance-Max:750 mΩ
DescriptionTRANSISTOR RF DMOS SOT123A
DescriptionNXP Semiconductors BLF145 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:4, DS Breakdown Voltage-Min:65 V, Number of Elements:1, Drain Current-Max (Abs) (ID):6 A, Drain Current-Max (ID):6 A, Drain-source On Resistance-Max:750 mΩ
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