NXP Semiconductor BUJ100B overview
BUJ100B is made by NXP Semiconductor. NXP Semiconductors BUJ100B Power Bipolar Transistor, Collector-Emitter Voltage-Max:350 V, Collector Current-Max (IC):1 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):9
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Part number or familyBUJ100B
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Manufactured byNXP Semiconductor
DescriptionNXP Semiconductors BUJ100B Power Bipolar Transistor, Collector-Emitter Voltage-Max:350 V, Collector Current-Max (IC):1 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):9
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