NXP Semiconductor PZM11NB1 T/R overview
DIODE ZENER 300MW 11V 2% SOT346 NXP Semiconductors PZM11NB1T/R Zener Diode, Working Test Current:5 mA, Reverse Current-Max:100 nA, Power Dissipation-Max:300 mW,...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionDIODE ZENER 300MW 11V 2% SOT346
DescriptionNXP Semiconductors PZM11NB1T/R Zener Diode, Working Test Current:5 mA, Reverse Current-Max:100 nA, Power Dissipation-Max:300 mW, Reference Voltage-Nom:11 V, Diode Element Material:SILICON, Diode Type:ZENER DIODE, Polarity:UNIDIRECTIONAL, Configuration:SINGLE, Surface Mount:YES, Number of Elements:1, Technology:ZENER
DescriptionNXP SEMICONDUCTOR PZM11NB1 T/R DIODE ZENER 300MW 11V 2% SOT346
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| # | Name |
|---|---|
| 1 | PZM11NB1T/R |