NXP Semiconductor PZM10NB T/R overview
DIODE ZENER 300MW 10V 5% SOT346 NXP Semiconductors PZM10NBT/R Zener Diode, Working Test Current:5 mA, Reverse Current-Max:200 nA, Power Dissipation-Max:300 mW, ...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionDIODE ZENER 300MW 10V 5% SOT346
DescriptionNXP Semiconductors PZM10NBT/R Zener Diode, Working Test Current:5 mA, Reverse Current-Max:200 nA, Power Dissipation-Max:300 mW, Reference Voltage-Nom:10 V, Diode Element Material:SILICON, Diode Type:ZENER DIODE, Polarity:UNIDIRECTIONAL, Configuration:SINGLE, Surface Mount:YES, Number of Elements:1, Technology:ZENER
DescriptionNXP SEMICONDUCTOR PZM10NB T/R DIODE ZENER 300MW 10V 5% SOT346
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| # | Name |
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| 1 | PZM10NBT/R |
