NXP Semiconductor PUMD10 T/R overview
NXP Semiconductors PUMD10T/R Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:50 V, Collector Current-Max (IC):100 mA, Polarity/Channel Type:NPN A...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors PUMD10T/R Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:50 V, Collector Current-Max (IC):100 mA, Polarity/Channel Type:NPN AND PNP, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR, Number of Terminals:6, Number of Elements:2, DC Current Gain-Min (hFE):100, Transition Frequency-Nom (fT):230 MHz
DescriptionTRANS NPN/PNP 50V 100MA SOT363
DescriptionNXP Semiconductors PUMD10T/R Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:50 V, Collector Current-Max (IC):100 mA, Polarity/Channel Type:NPN AND PNP, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR, Number of Terminals:6, Number of Elements:2, DC Current Gain-Min (hFE):100, Transition Frequency-Nom (fT):230 MHz
DescriptionNXP SEMICONDUCTOR PUMD10 T/R TRANS NPN/PNP 50V 100MA SOT363
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| # | Name |
|---|---|
| 1 | PUMD10T/R |