NXP Semiconductor BLF4G22S-100 overview
NXP BLF4G22S-100 Specialized Hot IC, BLF4G22S-100 NXP BASESTATION FINAL 2.2GHZ SOT502B NXP Semiconductors BLF4G22S-100 Rf Power Field-effect Transistor, Polarit...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP BLF4G22S-100 Specialized Hot IC, BLF4G22S-100 NXP
DescriptionBASESTATION FINAL 2.2GHZ SOT502B
DescriptionNXP Semiconductors BLF4G22S-100 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):12 A, Drain Current-Max (ID):12 A
DescriptionNXP SEMICONDUCTOR BLF4G22S-100 BASESTATION FINAL 2.2GHZ SOT502B
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