NXP Semiconductor BLF4G20LS-110B overview
BASESTATION FINAL 2GHZ SOT502B NXP Semiconductors BLF4G20LS-110B Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configura...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionBASESTATION FINAL 2GHZ SOT502B
DescriptionNXP Semiconductors BLF4G20LS-110B Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):12 A, Drain Current-Max (ID):12 A
DescriptionNXP SEMICONDUCTOR BLF4G20LS-110B BASESTATION FINAL 2GHZ SOT502B
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