NXP Semiconductor BLF4G10LS-160 overview
BASESTATION FINAL 1GHZ SOT502A NXP Semiconductors BLF4G10LS-160 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configurat...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionBASESTATION FINAL 1GHZ SOT502A
DescriptionNXP Semiconductors BLF4G10LS-160 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:3, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (ID):15 A
DescriptionNXP SEMICONDUCTOR BLF4G10LS-160 BASESTATION FINAL 1GHZ SOT502A
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