NXP Semiconductor BGF844 overview
POWER MODULE GSM800 EDGE SOT365C BGF844 NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:50 Ω, Input Power-Max (CW):20 dBm, VSWR-Max:2, Gain:28 dB, Operating Frequency-Max:894 MHz, RF/Microwave Device Type:NARROW BAND HIGH POWER NXP SEMICONDUCTOR BGF844 POWER MODULE GSM800 EDGE S...
What is NXP Semiconductor BGF844?
POWER MODULE GSM800 EDGE SOT365C BGF844 NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:50 Ω, Input Power-Max (CW):20 dBm, VSWR-Max:2, Gain:28 dB, Operating Frequency-Max:894 MHz, RF/Microwave Device Type:NARROW BAND HIGH POWER NXP SEMICONDUCTOR BGF844 POWER MODULE GSM800 EDGE S...
Product details
Manufactured byNXP Semiconductor
Product groupModules
DescriptionPOWER MODULE GSM800 EDGE SOT365C
Description 1785100701BGF844 NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:50 Ω, Input Power-Max (CW):20 dBm, VSWR-Max:2, Gain:28 dB, Operating Frequency-Max:894 MHz, RF/Microwave Device Type:NARROW BAND HIGH POWER
Description 1768702385NXP SEMICONDUCTOR BGF844 POWER MODULE GSM800 EDGE SOT365C
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
NXP Semiconductor
View NXP Semiconductor profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request