NXP Semiconductor BGD885 overview
AMP GAIN POWER 860MHZ SOT115D BGD885 NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:75 Ω, Gain:16.5 dB, Operating Frequency-Max:860 MHz, RF/Microwave Device Type:WIDE BAND MEDIUM POWER NXP SEMICONDUCTOR BGD885 AMP GAIN POWER 860MHZ SOT115D
What is NXP Semiconductor BGD885?
NXP SEMICONDUCTOR BGD885 AMP GAIN POWER 860MHZ SOT1.... AMP GAIN POWER 860MHZ SOT115D BGD885 NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:75 Ω, Gain:16.5 dB, Operating Frequency-Max:860 MHz, RF/Microwave Device Type:WIDE BAND MEDIUM POWER NXP SEMICONDUCTOR BGD885 AMP GAIN POWER 860MHZ SOT115D
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionAMP GAIN POWER 860MHZ SOT115D
Description 1785099691BGD885 NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:75 Ω, Gain:16.5 dB, Operating Frequency-Max:860 MHz, RF/Microwave Device Type:WIDE BAND MEDIUM POWER
Description 1768700058NXP SEMICONDUCTOR BGD885 AMP GAIN POWER 860MHZ SOT115D
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