NXP Semiconductor BGD816L overview
AMP GAIN POWER 860MHZ SOT115J BGD816L NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:75 Ω, Gain:22 dB, Operating Frequency-Max:870 MHz, RF/Microwave Device Type:WIDE BAND HIGH POWER NXP SEMICONDUCTOR BGD816L AMP GAIN POWER 860MHZ SOT115J
What is NXP Semiconductor BGD816L?
NXP SEMICONDUCTOR BGD816L AMP GAIN POWER 860MHZ SOT.... AMP GAIN POWER 860MHZ SOT115J BGD816L NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:75 Ω, Gain:22 dB, Operating Frequency-Max:870 MHz, RF/Microwave Device Type:WIDE BAND HIGH POWER NXP SEMICONDUCTOR BGD816L AMP GAIN POWER 860MHZ SOT115J
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionAMP GAIN POWER 860MHZ SOT115J
Description 1785099547BGD816L NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:75 Ω, Gain:22 dB, Operating Frequency-Max:870 MHz, RF/Microwave Device Type:WIDE BAND HIGH POWER
Description 1768699921NXP SEMICONDUCTOR BGD816L AMP GAIN POWER 860MHZ SOT115J
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