NXP Semiconductor BGD812 overview
AMP GAIN POWER 860MHZ SOT115J BGD812 NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:75 Ω, Gain:19 dB, Operating Frequency-Max:870 MHz, RF/Microwave Device Type:WIDE BAND HIGH POWER NXP SEMICONDUCTOR BGD812 AMP GAIN POWER 860MHZ SOT115J
What is NXP Semiconductor BGD812?
NXP SEMICONDUCTOR BGD812 AMP GAIN POWER 860MHZ SOT1.... AMP GAIN POWER 860MHZ SOT115J BGD812 NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:75 Ω, Gain:19 dB, Operating Frequency-Max:870 MHz, RF/Microwave Device Type:WIDE BAND HIGH POWER NXP SEMICONDUCTOR BGD812 AMP GAIN POWER 860MHZ SOT115J
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionAMP GAIN POWER 860MHZ SOT115J
Description 1785099331BGD812 NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:75 Ω, Gain:19 dB, Operating Frequency-Max:870 MHz, RF/Microwave Device Type:WIDE BAND HIGH POWER
Description 1768699650NXP SEMICONDUCTOR BGD812 AMP GAIN POWER 860MHZ SOT115J
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