NXP Semiconductor BGD812 overview
AMP GAIN POWER 860MHZ SOT115J BGD812 NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:75 Ω, Gain:19 dB, Operating Frequency-Max:870 MHz, RF/...
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DescriptionAMP GAIN POWER 860MHZ SOT115J
DescriptionBGD812 NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:75 Ω, Gain:19 dB, Operating Frequency-Max:870 MHz, RF/Microwave Device Type:WIDE BAND HIGH POWER
DescriptionNXP SEMICONDUCTOR BGD812 AMP GAIN POWER 860MHZ SOT115J
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