NXP Semiconductor BGD802 overview
AMP GAIN POWER 860MHZ SOT115J BGD802 NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:75 Ω, Gain:18.5 dB, Operating Frequency-Max:860 MHz, RF/Microwave Device Type:WIDE BAND HIGH POWER NXP SEMICONDUCTOR BGD802 AMP GAIN POWER 860MHZ SOT115J
What is NXP Semiconductor BGD802?
NXP SEMICONDUCTOR BGD802 AMP GAIN POWER 860MHZ SOT1.... AMP GAIN POWER 860MHZ SOT115J BGD802 NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:75 Ω, Gain:18.5 dB, Operating Frequency-Max:860 MHz, RF/Microwave Device Type:WIDE BAND HIGH POWER NXP SEMICONDUCTOR BGD802 AMP GAIN POWER 860MHZ SOT115J
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionAMP GAIN POWER 860MHZ SOT115J
Description 1785099116BGD802 NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:75 Ω, Gain:18.5 dB, Operating Frequency-Max:860 MHz, RF/Microwave Device Type:WIDE BAND HIGH POWER
Description 1768699375NXP SEMICONDUCTOR BGD802 AMP GAIN POWER 860MHZ SOT115J
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