NXP Semiconductor BGD712 overview
IC AMPLIFIER POWER SOT-115J BGD712 NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:75 Ω, Gain:19 dB, Operating Frequency-Max:750 MHz, RF/Microwave Device Type:WIDE BAND HIGH POWER NXP SEMICONDUCTOR BGD712 IC AMPLIFIER POWER SOT-115J
What is NXP Semiconductor BGD712?
NXP SEMICONDUCTOR BGD712 IC AMPLIFIER POWER SOT-115.... IC AMPLIFIER POWER SOT-115J BGD712 NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:75 Ω, Gain:19 dB, Operating Frequency-Max:750 MHz, RF/Microwave Device Type:WIDE BAND HIGH POWER NXP SEMICONDUCTOR BGD712 IC AMPLIFIER POWER SOT-115J
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionIC AMPLIFIER POWER SOT-115J
Description 1785098834BGD712 NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:75 Ω, Gain:19 dB, Operating Frequency-Max:750 MHz, RF/Microwave Device Type:WIDE BAND HIGH POWER
Description 1768698969NXP SEMICONDUCTOR BGD712 IC AMPLIFIER POWER SOT-115J
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