NXP Semiconductor BGD502 overview
AMP GAIN POWER 550MHZ SOT115J BGD502 NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:75 Ω, Input Power-Max (CW):16.25 dBm, Gain:18.8 dB, Operating Frequency-Max:550 MHz, RF/Microwave Device Type:WIDE BAND HIGH POWER NXP SEMICONDUCTOR BGD502 AMP GAIN POWER 550MHZ SOT115J
What is NXP Semiconductor BGD502?
NXP SEMICONDUCTOR BGD502 AMP GAIN POWER 550MHZ SOT1.... AMP GAIN POWER 550MHZ SOT115J BGD502 NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:75 Ω, Input Power-Max (CW):16.25 dBm, Gain:18.8 dB, Operating Frequency-Max:550 MHz, RF/Microwave Device Type:WIDE BAND HIGH POWER NXP SEMICONDUCTOR BGD502 AMP GAIN POWER 550MHZ SOT115J
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionAMP GAIN POWER 550MHZ SOT115J
Description 1785098326BGD502 NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:75 Ω, Input Power-Max (CW):16.25 dBm, Gain:18.8 dB, Operating Frequency-Max:550 MHz, RF/Microwave Device Type:WIDE BAND HIGH POWER
Description 1768698424NXP SEMICONDUCTOR BGD502 AMP GAIN POWER 550MHZ SOT115J
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