NXP Semiconductor BGD502 overview
AMP GAIN POWER 550MHZ SOT115J BGD502 NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:75 Ω, Input Power-Max (CW):16.25 dBm, Gain:18.8 dB, Op...
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Product groupModules
DescriptionAMP GAIN POWER 550MHZ SOT115J
DescriptionBGD502 NXP Semiconductors Rf/microwave Amplifier, Characteristic Impedance:75 Ω, Input Power-Max (CW):16.25 dBm, Gain:18.8 dB, Operating Frequency-Max:550 MHz, RF/Microwave Device Type:WIDE BAND HIGH POWER
DescriptionNXP SEMICONDUCTOR BGD502 AMP GAIN POWER 550MHZ SOT115J
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