NXP Semiconductor PUMT1 T/R overview
NXP Semiconductors PUMT1T/R Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:40 V, Collector Current-Max (IC):100 mA, Polarity/Channel Type:PNP, S...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors PUMT1T/R Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:40 V, Collector Current-Max (IC):100 mA, Polarity/Channel Type:PNP, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS, Number of Terminals:6, Number of Elements:2, DC Current Gain-Min (hFE):120, Transition Frequency-Nom (fT):100 MHz
DescriptionTRANS PNP 40V 100MA SOT363
DescriptionNXP Semiconductors PUMT1T/R Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:40 V, Collector Current-Max (IC):100 mA, Polarity/Channel Type:PNP, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS, Number of Terminals:6, Number of Elements:2, DC Current Gain-Min (hFE):120, Transition Frequency-Nom (fT):100 MHz
DescriptionNXP SEMICONDUCTOR PUMT1 T/R TRANS PNP 40V 100MA SOT363
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| # | Name |
|---|---|
| 1 | PUMT1T/R |