NXP Semiconductor PSMN085-150K /T3 overview
NXP Semiconductors PSMN085-150K/T3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, ...
Manufactured byNXP Semiconductor
Part number or familyPSMN085-150K /T3
Product typeDiscrete Semiconductor Product
Product details
Manufactured byNXP Semiconductor
Product typeDiscrete Semiconductor Product
DescriptionNXP Semiconductors PSMN085-150K/T3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:150 V, Number of Elements:1, Drain Current-Max (ID):3.5 A, Drain-source On Resistance-Max:85 mΩ
DescriptionMOSFET N-CH 150V 4.1A SOT96-1
DescriptionNXP Semiconductors PSMN085-150K/T3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:150 V, Number of Elements:1, Drain Current-Max (ID):3.5 A, Drain-source On Resistance-Max:85 mΩ
DescriptionNXP SEMICONDUCTOR PSMN085-150K /T3 MOSFET N-CH 150V 4.1A SOT96-1
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Discrete Semiconductor Product
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| # | Name |
|---|---|
| 1 | PSMN085-150K/T3 |