NXP Semiconductor PSMN070-200P overview
MOSFET N-CH 200V 35MA SOT78 NXP Semiconductors PSMN070-200P Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionMOSFET N-CH 200V 35MA SOT78
DescriptionNXP Semiconductors PSMN070-200P Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:200 V,Number of Elements:1,Drain Current-Max (Abs) (ID):33 A,Drain Current-Max (ID):35 A,Drain-source On Resistance-Max:70 m?
DescriptionNXP SEMICONDUCTOR PSMN070-200P MOSFET N-CH 200V 35MA SOT78
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