NXP Semiconductor PSMN030-150P overview
NXP PSMN030-150P Integrated Circuit, PSMN030-150P NXP MOSFET N-CH 150V 55.5A SOT78 NXP Semiconductors PSMN030-150P Power Field-effect Transistor, Polarity/Chann...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP PSMN030-150P Integrated Circuit, PSMN030-150P NXP
DescriptionMOSFET N-CH 150V 55.5A SOT78
DescriptionNXP Semiconductors PSMN030-150P Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:150 V,Number of Elements:1,Drain Current-Max (Abs) (ID):55.5 A,Drain Current-Max (ID):55.5 A,Drain-source On Resistance-Max:30 m?
DescriptionNXP SEMICONDUCTOR PSMN030-150P MOSFET N-CH 150V 55.5A SOT78
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NXP Semiconductor
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Modules
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