NXP Semiconductor PSMN015-110P overview
NXP PSMN015-110P Specialized Hot IC, PSMN015-110P NXP NXP Semiconductors PSMN015-110P Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mo...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP PSMN015-110P Specialized Hot IC, PSMN015-110P NXP
DescriptionNXP Semiconductors PSMN015-110P Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:110 V, Number of Elements:1, Drain Current-Max (Abs) (ID):75 A, Drain Current-Max (ID):75 A, Drain-source On Resistance-Max:15 mΩ
DescriptionMOSFET N-CH TRENCH 110V TO220AB
DescriptionNXP Semiconductors PSMN015-110P Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:110 V, Number of Elements:1, Drain Current-Max (Abs) (ID):75 A, Drain Current-Max (ID):75 A, Drain-source On Resistance-Max:15 mΩ
DescriptionNXP SEMICONDUCTOR PSMN015-110P MOSFET N-CH TRENCH 110V TO220AB
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Modules
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