NXP Semiconductor PMBD353 T/R overview
DIODE SCHOTTKY 4V 30MA SOT23 NXP Semiconductors PMBD353T/R Microwave Mixer Diode, Output Current-Max:30 mA, Forward Voltage-Max (VF):600 mV, Diode Capacitance-M...
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Manufactured byNXP Semiconductor
Product typeIC Device
DescriptionDIODE SCHOTTKY 4V 30MA SOT23
DescriptionNXP Semiconductors PMBD353T/R Microwave Mixer Diode, Output Current-Max:30 mA, Forward Voltage-Max (VF):600 mV, Diode Capacitance-Max:1 pF, Diode Element Material:SILICON, Diode Type:MIXER DIODE, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:4 V, Number of Elements:2, Technology:SCHOTTKY
DescriptionNXP SEMICONDUCTOR PMBD353 T/R DIODE SCHOTTKY 4V 30MA SOT23
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| # | Name |
|---|---|
| 1 | PMBD353T/R |