NXP Semiconductor PHX8NQ11T overview
NXP Semiconductors PHX8NQ11T Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number ...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors PHX8NQ11T Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:110 V, Number of Elements:1, Drain Current-Max (Abs) (ID):7.5 A, Drain Current-Max (ID):7.5 A, Drain-source On Resistance-Max:180 mΩ
DescriptionMOSFET N-CH 110V 7.5A SOT186A
DescriptionNXP Semiconductors PHX8NQ11T Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:110 V, Number of Elements:1, Drain Current-Max (Abs) (ID):7.5 A, Drain Current-Max (ID):7.5 A, Drain-source On Resistance-Max:180 mΩ
DescriptionNXP SEMICONDUCTOR PHX8NQ11T MOSFET N-CH 110V 7.5A SOT186A
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