NXP Semiconductor PHT8N06LT /T3 overview
MOSFET N-CH TRENCH 55V SOT223 NXP Semiconductors PHT8N06LT/T3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SIN...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionMOSFET N-CH TRENCH 55V SOT223
DescriptionNXP Semiconductors PHT8N06LT/T3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:4,DS Breakdown Voltage-Min:55 V,Number of Elements:1,Drain Current-Max (ID):2.2 A,Drain-source On Resistance-Max:80 m?
DescriptionNXP SEMICONDUCTOR PHT8N06LT /T3 MOSFET N-CH TRENCH 55V SOT223
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| # | Name |
|---|---|
| 1 | PHT8N06LT/T3 |