NXP Semiconductor PHT6N06T /T3 overview
MOSFET N-CH 55V 5.5A SOT223 NXP Semiconductors PHT6N06T/T3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionMOSFET N-CH 55V 5.5A SOT223
DescriptionNXP Semiconductors PHT6N06T/T3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:4,DS Breakdown Voltage-Min:55 V,Number of Elements:1,Drain Current-Max (ID):5.5 A,Drain-source On Resistance-Max:150 m?
DescriptionNXP SEMICONDUCTOR PHT6N06T /T3 MOSFET N-CH 55V 5.5A SOT223
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| # | Name |
|---|---|
| 1 | PHT6N06T/T3 |