NXP Semiconductor PHP18NQ11T overview
NXP Semiconductors PHP18NQ11T Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors PHP18NQ11T Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:110 V, Number of Elements:1, Drain Current-Max (Abs) (ID):18 A, Drain Current-Max (ID):18 A, Drain-source On Resistance-Max:90 mΩ
DescriptionMOSFET N-CH TRENCH 110V TO220AB
DescriptionNXP Semiconductors PHP18NQ11T Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:110 V, Number of Elements:1, Drain Current-Max (Abs) (ID):18 A, Drain Current-Max (ID):18 A, Drain-source On Resistance-Max:90 mΩ
DescriptionNXP SEMICONDUCTOR PHP18NQ11T MOSFET N-CH TRENCH 110V TO220AB
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