NXP Semiconductor PHN210T /T3 overview
MOSFET N-CH 30V 3.4A SOT96-1 NXP Semiconductors PHN210T/T3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SEPARA...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionMOSFET N-CH 30V 3.4A SOT96-1
DescriptionNXP Semiconductors PHN210T/T3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:30 V,Number of Elements:2,Drain Current-Max (ID):3.4 A,Drain-source On Resistance-Max:100 m?
DescriptionNXP SEMICONDUCTOR PHN210T /T3 MOSFET N-CH 30V 3.4A SOT96-1
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| # | Name |
|---|---|
| 1 | PHN210T/T3 |