NXP Semiconductor PHD37N06LT /T3 overview
MOSFET N-CH TRENCH 55V DPAK NXP Semiconductors PHD37N06LT/T3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SING...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionMOSFET N-CH TRENCH 55V DPAK
DescriptionNXP Semiconductors PHD37N06LT/T3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:55 V,Number of Elements:1,Drain Current-Max (ID):37 A,Drain-source On Resistance-Max:35 m?
DescriptionNXP SEMICONDUCTOR PHD37N06LT /T3 MOSFET N-CH TRENCH 55V DPAK
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| # | Name |
|---|---|
| 1 | PHD37N06LT/T3 |