NXP Semiconductor PHD23NQ10T /T3 overview
NXP Semiconductors PHD23NQ10T/T3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Nu...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors PHD23NQ10T/T3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (ID):23 A, Drain-source On Resistance-Max:70 mΩ
DescriptionMOSFET N-CH 100V 23A SOT428
DescriptionNXP Semiconductors PHD23NQ10T/T3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (ID):23 A, Drain-source On Resistance-Max:70 mΩ
DescriptionNXP SEMICONDUCTOR PHD23NQ10T /T3 MOSFET N-CH 100V 23A SOT428
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| # | Name |
|---|---|
| 1 | PHD23NQ10T/T3 |