NXP Semiconductor PHB27NQ10T /T3 overview
PHB27NQ10T /T3 by NXP Semiconductor is listed under Discrete Semiconductor Products. NXP Semiconductors PHB27NQ10T/T3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of…
Manufactured byNXP Semiconductor
Part number or familyPHB27NQ10T /T3
Product typeDiscrete Semiconductor Product
Product details
Manufactured byNXP Semiconductor
Product typeDiscrete Semiconductor Product
DescriptionNXP Semiconductors PHB27NQ10T/T3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (ID):28 A, Drain-source On Resistance-Max:50 mΩ
DescriptionMOSFET N-CH 100V 28A SOT404
DescriptionNXP Semiconductors PHB27NQ10T/T3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (ID):28 A, Drain-source On Resistance-Max:50 mΩ
DescriptionNXP SEMICONDUCTOR PHB27NQ10T /T3 MOSFET N-CH 100V 28A SOT404
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Discrete Semiconductor Product
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| # | Name |
|---|---|
| 1 | PHB27NQ10T/T3 |