NXP Semiconductor BYV32EB-200 /T3 overview
NXP Semiconductors BYV32EB-200/T3 Rectifier Diode, Output Current-Max:20 A, Reverse Recovery Time-Max:25 ns, Diode Element Material:SILICON, Diode Type:RECTIFIE...
Manufactured byNXP Semiconductor
Part number or familyBYV32EB-200 /T3
Product typeDiscrete Semiconductor Product
Product details
Manufactured byNXP Semiconductor
Product typeDiscrete Semiconductor Product
DescriptionNXP Semiconductors BYV32EB-200/T3 Rectifier Diode, Output Current-Max:20 A, Reverse Recovery Time-Max:25 ns, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:COMMON CATHODE, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:200 V, Number of Elements:2
DescriptionDIODE RECT UFAST 200V D2PAK
DescriptionNXP Semiconductors BYV32EB-200/T3 Rectifier Diode, Output Current-Max:20 A, Reverse Recovery Time-Max:25 ns, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:COMMON CATHODE, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:200 V, Number of Elements:2
DescriptionNXP SEMICONDUCTOR BYV32EB-200 /T3 DIODE RECT UFAST 200V D2PAK
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Discrete Semiconductor Product
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| # | Name |
|---|---|
| 1 | BYV32EB-200/T3 |