NXP Semiconductor BUK9E04-30B overview
MOSFET N-CH TRENCH 30V I2PAK NXP Semiconductors BUK9E04-30B Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionMOSFET N-CH TRENCH 30V I2PAK
DescriptionNXP Semiconductors BUK9E04-30B Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:30 V,Number of Elements:1,Drain Current-Max (Abs) (ID):75 A,Drain Current-Max (ID):75 A,Drain-source On Resistance-Max:4.4 m?
DescriptionNXP SEMICONDUCTOR BUK9E04-30B MOSFET N-CH TRENCH 30V I2PAK
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