NXP Semiconductor BUK98150-55 /T3 overview
NXP Semiconductors BUK98150-55/T3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, N...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors BUK98150-55/T3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:55 V, Number of Elements:1, Drain Current-Max (Abs) (ID):5.5 A, Drain Current-Max (ID):2.6 A, Drain-source On Resistance-Max:150 mΩ
DescriptionMOSFET N-CH TRENCH 55V SOT-223
DescriptionNXP Semiconductors BUK98150-55/T3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:55 V, Number of Elements:1, Drain Current-Max (Abs) (ID):5.5 A, Drain Current-Max (ID):2.6 A, Drain-source On Resistance-Max:150 mΩ
DescriptionNXP SEMICONDUCTOR BUK98150-55 /T3 MOSFET N-CH TRENCH 55V SOT-223
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| # | Name |
|---|---|
| 1 | BUK98150-55/T3 |