NXP Semiconductor BUK95150-55A overview
NXP BUK95150-55A Integrated Circuit, BUK95150-55A NXP NXP Semiconductors BUK95150-55A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mo...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP BUK95150-55A Integrated Circuit, BUK95150-55A NXP
DescriptionNXP Semiconductors BUK95150-55A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:55 V, Number of Elements:1, Drain Current-Max (Abs) (ID):13 A, Drain Current-Max (ID):13 A, Drain-source On Resistance-Max:161 mΩ
DescriptionMOSFET N-CH TRENCH 55V TO220AB
DescriptionNXP Semiconductors BUK95150-55A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:55 V, Number of Elements:1, Drain Current-Max (Abs) (ID):13 A, Drain Current-Max (ID):13 A, Drain-source On Resistance-Max:161 mΩ
DescriptionNXP SEMICONDUCTOR BUK95150-55A MOSFET N-CH TRENCH 55V TO220AB
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