NXP Semiconductor BUK7907-55AIE overview
NXP Semiconductors BUK7907-55AIE Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, CUR...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors BUK7907-55AIE Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR, Number of Terminals:5, DS Breakdown Voltage-Min:55 V, Number of Elements:1, Drain Current-Max (Abs) (ID):75 A, Drain Current-Max (ID):75 A, Drain-source On Resistance-Max:7 mΩ
DescriptionMOSFET N-CH TRENCH 55V TO220AB
DescriptionNXP Semiconductors BUK7907-55AIE Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR, Number of Terminals:5, DS Breakdown Voltage-Min:55 V, Number of Elements:1, Drain Current-Max (Abs) (ID):75 A, Drain Current-Max (ID):75 A, Drain-source On Resistance-Max:7 mΩ
DescriptionNXP SEMICONDUCTOR BUK7907-55AIE MOSFET N-CH TRENCH 55V TO220AB
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