NXP Semiconductor BUK7880-55 /T3 overview
NXP Semiconductors BUK7880-55/T3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Nu...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors BUK7880-55/T3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:55 V, Number of Elements:1, Drain Current-Max (ID):3.5 A, Drain-source On Resistance-Max:80 mΩ
DescriptionMOSFET N-CH 55V 7.5A SOT223
DescriptionNXP Semiconductors BUK7880-55/T3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:55 V, Number of Elements:1, Drain Current-Max (ID):3.5 A, Drain-source On Resistance-Max:80 mΩ
DescriptionNXP SEMICONDUCTOR BUK7880-55 /T3 MOSFET N-CH 55V 7.5A SOT223
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| # | Name |
|---|---|
| 1 | BUK7880-55/T3 |