NXP Semiconductor BUK7575-100A overview
NXP BUK7575-100A Integrated Circuit, BUK7575-100A NXP NXP Semiconductors BUK7575-100A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mo...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP BUK7575-100A Integrated Circuit, BUK7575-100A NXP
DescriptionNXP Semiconductors BUK7575-100A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):23 A, Drain Current-Max (ID):23 A, Drain-source On Resistance-Max:75 mΩ
DescriptionMOSFET N-CH TRENCH 100V TO220AB
DescriptionNXP Semiconductors BUK7575-100A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):23 A, Drain Current-Max (ID):23 A, Drain-source On Resistance-Max:75 mΩ
DescriptionNXP SEMICONDUCTOR BUK7575-100A MOSFET N-CH TRENCH 100V TO220AB
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