NXP Semiconductor BSP230 /T3 overview
NXP Semiconductors BSP230/T3 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors BSP230/T3 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:300 V, Number of Elements:1, Drain Current-Max (Abs) (ID):210 mA, Drain Current-Max (ID):210 mA, Drain-source On Resistance-Max:17 Ω
DescriptionMOSFET P-CH 300V 210MA SOT223
DescriptionNXP Semiconductors BSP230/T3 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:300 V, Number of Elements:1, Drain Current-Max (Abs) (ID):210 mA, Drain Current-Max (ID):210 mA, Drain-source On Resistance-Max:17 Ω
DescriptionNXP SEMICONDUCTOR BSP230 /T3 MOSFET P-CH 300V 210MA SOT223
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| # | Name |
|---|---|
| 1 | BSP230/T3 |