NXP Semiconductor BSP110 T/R overview
Philips Semiconductors BSP110T/R Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:Single,Drain Current-Max (Abs) (...
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Product groupModules
DescriptionPhilips Semiconductors BSP110T/R Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:Single,Drain Current-Max (Abs) (ID):325 mA
DescriptionMOSFET N-CH 100V 520MA SOT223
DescriptionNXP Semiconductors BSP110T/R Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:80 V, Number of Elements:1, Drain Current-Max (Abs) (ID):325 mA, Drain Current-Max (ID):325 mA, Drain -source On Resistance-Max:7 Ω
DescriptionNXP SEMICONDUCTOR BSP110 T/R MOSFET N-CH 100V 520MA SOT223
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| # | Name |
|---|---|
| 1 | BSP110T/R |