NXP Semiconductor BLF1820-90 overview
NXP BLF1820-90 Integrated Circuit, BLF1820-90 NXP TRANSISTOR RF LDMOS SOT502A NXP Semiconductors BLF1820-90 Rf Power Field-effect Transistor, Polarity/Channel T...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP BLF1820-90 Integrated Circuit, BLF1820-90 NXP
DescriptionTRANSISTOR RF LDMOS SOT502A
DescriptionNXP Semiconductors BLF1820-90 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):12 A, Drain Current-Max (ID):12 A
DescriptionNXP SEMICONDUCTOR BLF1820-90 TRANSISTOR RF LDMOS SOT502A
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