NXP Semiconductor BCV63B T/R overview
NXP Semiconductors BCV63BT/R Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:30 V, Collector Current-Max (IC):100 mA, Polarity/Channel Type:NPN, ...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors BCV63BT/R Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:30 V, Collector Current-Max (IC):100 mA, Polarity/Channel Type:NPN, Surface Mount:YES, Configuration:CASCADED, 2 ELEMENTS, Number of Terminals:4, Number of Elements:2, DC Current Gain-Min (hFE):200, Transition Frequency-Nom (fT):100 MHz
DescriptionTRANS PNP 30V 100MA DUAL SOT143B
DescriptionNXP Semiconductors BCV63BT/R Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:30 V, Collector Current-Max (IC):100 mA, Polarity/Channel Type:NPN, Surface Mount:YES, Configuration:CASCADED, 2 ELEMENTS, Number of Terminals:4, Number of Elements:2, DC Current Gain-Min (hFE):200, Transition Frequency-Nom (fT):100 MHz
DescriptionNXP SEMICONDUCTOR BCV63B T/R TRANS PNP 30V 100MA DUAL SOT143B
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| # | Name |
|---|---|
| 1 | BCV63BT/R |