NXP Semiconductor BAV23 T/R overview
NXP Semiconductors BAV23T/R Rectifier Diode, Output Current-Max:225 mA, Forward Voltage-Max (VF):1.25 V, Reverse Recovery Time-Max:50 ns, Reverse Current-Max:10...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors BAV23T/R Rectifier Diode, Output Current-Max:225 mA, Forward Voltage-Max (VF):1.25 V, Reverse Recovery Time-Max:50 ns, Reverse Current-Max:100 nA, Power Dissipation-Max:250 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SEPARATE, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:250 V, Number of Elements:2
DescriptionDIODE SW DBL 200V 225MA SOT143B
DescriptionNXP Semiconductors BAV23T/R Rectifier Diode, Output Current-Max:225 mA, Forward Voltage-Max (VF):1.25 V, Reverse Recovery Time-Max:50 ns, Reverse Current-Max:100 nA, Power Dissipation-Max:250 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SEPARATE, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:250 V, Number of Elements:2
DescriptionNXP SEMICONDUCTOR BAV23 T/R DIODE SW DBL 200V 225MA SOT143B
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| # | Name |
|---|---|
| 1 | BAV23T/R |
