NXP Semiconductor BA891 T/R overview
DIODE SWITCH BAND 35V SOD-523 NXP Semiconductors BA891T/R Microwave Mixer Diode, Output Current-Max:100 mA, Forward Voltage-Max (VF):1 V, Diode Capacitance-Max:...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionDIODE SWITCH BAND 35V SOD-523
DescriptionNXP Semiconductors BA891T/R Microwave Mixer Diode, Output Current-Max:100 mA, Forward Voltage-Max (VF):1 V, Diode Capacitance-Max:1.05 pF, Power Dissipation-Max:715 mW, Diode Element Material:SILICON, Diode Type:MIXER DIODE, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:35 V, Number of Elements:1, Technology:PLANAR DOPED BARRIER
DescriptionNXP SEMICONDUCTOR BA891 T/R DIODE SWITCH BAND 35V SOD-523
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| # | Name |
|---|---|
| 1 | BA891T/R |