NXP Semiconductor BA591 T/R overview
DIODE BAND-SWITCHING SOD323 NXP Semiconductors BA591T/R Microwave Mixer Diode, Diode Capacitance-Max:1.05 pF, Power Dissipation-Max:500 mW, Diode Element Materi...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionDIODE BAND-SWITCHING SOD323
DescriptionNXP Semiconductors BA591T/R Microwave Mixer Diode, Diode Capacitance-Max:1.05 pF, Power Dissipation-Max:500 mW, Diode Element Material:SILICON, Diode Type:MIXER DIODE, Configuration:SINGLE, Surface Mount:YES, Number of Elements:1
DescriptionNXP SEMICONDUCTOR BA591 T/R DIODE BAND-SWITCHING SOD323
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| # | Name |
|---|---|
| 1 | BA591T/R |