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BA277 T/R

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NXP Semiconductor BA277 T/R

NXP Semiconductor BA277 T/R overview

DIODE BAND-SWITCHING SOD523 NXP Semiconductors BA277T/R Microwave Mixer Diode, Output Current-Max:100 mA, Forward Voltage-Max (VF):1 V, Diode Capacitance-Max:1....

Manufactured byNXP Semiconductor
Part number or familyBA277 T/R
Product groupModules

Product details

Manufactured byNXP Semiconductor
Product groupModules
DescriptionDIODE BAND-SWITCHING SOD523
DescriptionNXP Semiconductors BA277T/R Microwave Mixer Diode, Output Current-Max:100 mA, Forward Voltage-Max (VF):1 V, Diode Capacitance-Max:1.2 pF, Power Dissipation-Max:715 mW, Diode Element Material:SILICON, Diode Type:MIXER DIODE, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:35 V, Number of Elements:1
DescriptionNXP SEMICONDUCTOR BA277 T/R DIODE BAND-SWITCHING SOD523

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# Name
1 BA277T/R