NXP Semiconductor 2N7002E T/R overview
MOSFET N CH TRENCH 60V SOT23 NXP Semiconductors 2N7002ET/R Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configurati...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionMOSFET N CH TRENCH 60V SOT23
DescriptionNXP Semiconductors 2N7002ET/R Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (ID):385 mA, Drain -source On Resistance-Max:3 Ω
DescriptionNXP SEMICONDUCTOR 2N7002E T/R MOSFET N CH TRENCH 60V SOT23
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| # | Name |
|---|---|
| 1 | 2N7002ET/R |