NTE Electronics NTE338F overview
NTE Electronics Inc NTE338F Rf Power Bipolar Transistor, Collector-Emitter Voltage-Max:20 V, Collector Current-Max (IC):4 A, Polarity/Channel Type:NPN, Surface ...
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Manufactured byNTE Electronics
Product groupModules
DescriptionNTE Electronics Inc NTE338F Rf Power Bipolar Transistor, Collector-Emitter Voltage-Max:20 V, Collector Current-Max (IC):4 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:4, Highest Frequency Band:HIGH FREQUENCY BAND, Number of Elements:1, DC Current Gain-Min (hFE):10
DescriptionNTE Electronics Inc NTE338F Rf Power Bipolar Transistor, Collector-Emitter Voltage-Max:20 V, Collector Current-Max (IC):4 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:4, Highest Frequency Band:HIGH FREQUENCY BAND, Number of Elements:1, DC Current Gain-Min (hFE):10
DescriptionNTE Electronics NTE338F NTE338F
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