NTE Electronics NTE55. overview
NTE Electronics Inc NTE55 Power Bipolar Transistor, Collector-Emitter Voltage-Max:150 V, Collector Current-Max (IC):8 A, Polarity/Channel Type:PNP, Surface Moun...
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Manufactured byNTE Electronics
Product groupModules
DescriptionNTE Electronics Inc NTE55 Power Bipolar Transistor, Collector-Emitter Voltage-Max:150 V, Collector Current-Max (IC):8 A, Polarity/Channel Type:PNP, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):40, Transition Frequency-Nom (fT):30 MHz
DescriptionNTE Electronics Inc NTE55 Power Bipolar Transistor, Collector-Emitter Voltage-Max:150 V, Collector Current-Max (IC):8 A, Polarity/Channel Type:PNP, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):40, Transition Frequency-Nom (fT):30 mΩz
DescriptionNTE ELECTRONICS NTE55. Bipolar Transistor
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| # | Name |
|---|---|
| 1 | NTE55 |