NTE Electronics NTE359 overview
NTE Electronics Inc NTE359 Rf Power Bipolar Transistor, Collector-Emitter Voltage-Max:35 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:NPN, Surface M...
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Manufactured byNTE Electronics
Product groupModules
DescriptionNTE Electronics Inc NTE359 Rf Power Bipolar Transistor, Collector-Emitter Voltage-Max:35 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:4, Highest Frequency Band:VERY HIGH FREQUENCY BAND, Number of Elements:1, DC Current Gain-Min (hFE):5
DescriptionNTE Electronics Inc NTE359 Rf Power Bipolar Transistor, Collector-Emitter Voltage-Max:35 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:4, Highest Frequency Band:VERY HIGH FREQUENCY BAND, Number of Elements:1, DC Current Gain-Min (hFE):5
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