NTE2383 by NTE Electronics | StockCheck

NTE Electronics NTE2383 overview

NTE Electronics Inc NTE2383 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number o...

Manufactured byNTE Electronics

Part number or familyNTE2383

Product groupModules

Product details

Manufactured byNTE Electronics

Product groupModules

DescriptionNTE Electronics Inc NTE2383 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):8 A, Drain Current-Max (ID):10.5 A, Drain-source On Resistance-Max:300 mΩ

DescriptionNTE Electronics Inc NTE2383 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (Abs) (ID):8 A,Drain Current-Max (ID):10.5 A,Drain-source On Resistance-Max:300 m?

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Manufactured by NTE Electronics View NTE Electronics profile

Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors

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