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2386

NTE Electronics · Modules

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NTE Electronics 2386

NTE Electronics 2386 overview

NTE Electronics Inc 2386 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:2, DS Break...

Manufactured byNTE Electronics
Part number or family2386
Product groupModules

Product details

Manufactured byNTE Electronics
Product groupModules
DescriptionNTE Electronics Inc 2386 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (ID):6.2 A, Drain-source On Resistance-Max:1.2 Ω
DescriptionNTE Electronics Inc 2386 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE,Number of Terminals:2,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (ID):6.2 A,Drain-source On Resistance-Max:1.2 ?

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Manufactured by NTE Electronics View NTE Electronics profile
Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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